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ZXTN19020DG Datasheet(PDF) 2 Page - Diodes Incorporated

Part # ZXTN19020DG
Description  20V NPN HIGH GAIN TRANSISTOR IN SOT223
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTN19020DG Datasheet(HTML) 2 Page - Diodes Incorporated

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ZXTN19020DG
Document Number DS33678 Rev. 2 - 2
2 of 7
www.diodes.com
June 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN19020DG
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
70
V
Collector-Emitter Voltage (forward blocking)
VCEX
70
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Collector Voltage (reverse blocking)
VECX
6
V
Emitter-Base Voltage
VEBO
7
V
Continuous Collector Current
IC
9
A
Base Current
IB
1
A
Peak Pulse Current
ICM
20
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
(Note 5)
PD
1.2
9.6
W
mW/°C
(Note 6)
1.6
12.8
(Note 7)
3
24
(Note 8)
5.3
42
Thermal Resistance, Junction to Ambient
(Note 5)
RθJA
104
°C/W
(Note 6)
78
(Note 7)
42
(Note 8)
23.5
Thermal Resistance, Junction to Lead
(Note 9)
RθJL
16
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 10)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes:
5. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
6. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper.
7. Same as Note 6, except the device is mounted on 50mm x 50mm 2oz copper.
8. Same as Note 8 measured at t<5 seconds.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.


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