ZXTP26020DMF_15 datasheet(3/6 Pages) DIODES

Part #	ZXTP26020DMF

Description	20V LOW VCE(SAT ) PNP SURFACE MOUNTED TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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ZXTP26020DMF

Document number: DS32101 Rev. 1 - 2

3 of 6

www.diodes.com

May 2010

A Product Line of

Diodes Incorporated

ZXTP26020DMF

Electrical Characteristics (at TA = 25°C unless otherwise specified)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

V(BR)CBO

-20

⎯

V

IC = -100μA, IE = 0A

Collector-Emitter Breakdown Voltage (Note 5)

V(BR)CEO

-20

⎯

V

IC = -10mA, IB = 0A

Emitter-Base Breakdown Voltage

V(BR)EBO

-7

⎯

V

IE = -100μA, IC = 0A

Collector Cutoff Current

Icbo

⎯

-100

-0.5

nA

μA

VCB = -20V, IE = 0A

VCB = -20V, IE = 0A,TA = 125°C

Emitter Cutoff Current

Ices

⎯

-100

nA

VCE = -20V, VBE = 0V

Base Cutoff Current

Iebo

⎯

-50

nA

VBE = -6V, IC = 0A

DC Current Gain (Note 5)

hFE

300

235

175

140

⎯

VCE = -2V, IC = -100mA

VCE = -2V, IC = -0.5A

VCE = -2V, IC = -1A

VCE = -2V, IC = -1.5A

Collector-Emitter Saturation Voltage (Note 5)

VCE(SAT)

⎯

-80

-100

-155

-235

mV

IC = -100mA, IB = -1mA

IC = -500mA, IB = -50mA

IC = -1A, IB = -50mA

IC = -1.25A, IB = -62.5mA

Equivalent On-Resistance

RCE(SAT)

⎯

125

⎯

m

Ω

IC = -1A, IB = -50mA

Base-Emitter Turn-On Voltage

VBE(ON)

⎯

-1.1

V

VCE = -5V, IC = -1A

Base-Emitter Saturation Voltage

VBE(SAT)

⎯

-1.15

V

IC = -1A, IB = -50mA

Output Capacitance (Note 5)

Cobo

⎯

20

pF

VCB = -10V, f = 1.0MHz

Current Gain-Bandwidth Product

fT

200

⎯

MHz

VCE = -10V, IC = -50mA,

f = 100MHz

Turn-On Time

ton

⎯

60

⎯

ns

VCC = -10V, IC = -1A

IB2 = -IB1 = -50mA

Delay Time

td

⎯

20

⎯

ns

Rise Time

tr

⎯

40

⎯

ns

Turn-Off Time

toff

⎯

167

⎯

ns

Storage Time

ts

⎯

140

⎯

ns

Fall Time

tf

⎯

27

⎯

ns

Notes:

5. Short duration pulse test used to minimize self-heating effect.

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