Features

1 of 10

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

LDMOS

RF MEMS

SXE1089Z

0.05GHz to 3GHz, CASCADABLE pHEMT

MMIC AMPLIFIER

RFMD’s SXE1089Z is a high performance pHEMT MMIC amplifier utilizing

a patented self-bias Darlington topology housed in a lowcost, surface

mountable SOT-89 package. The active bias network provides stable cur-

rent over temperature and process thereshold voltage variations.

Designed to run directly from a 5V supply, the SXE1089Z does not require

a dropping resistor as compared to typical Darlington amplifiers. The

SXE1089Z product is designed for high linearity 5V gain block applica-

tions that require small size and minimal external com-

ponents. It is internally matched to 50

.

Gain and Return Loss

T = 25°C

-30.0

-20.0

-10.0

0.0

10.0

20.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Frequency (GHz)

Note: Measured with Bias tees and deembedded to lead of device



Excellent ACP -65dBc with 9.5dBm

Channel Power at 2140MHz







Gain=11.7dB at 1960MHz



NF=3.2dB at 1960MHz



Single-Supply Operation:5V at



Broadband Internal Matching, No

Dropping Resistor



Patented Self-Bias Darlington

Topology



Consistent Current versus Temper-

ature



Insensitive to Process Threshold

Voltage Variation

Applications



PA Driver Amplifier, Multi-Carrier

Applications

DS110610



Package: SOT-89

SXE1089Z

0.05GHz to

3GHz, Cascad-

able pHEMT

MMIC Ampli-

fier

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

14.2

dB

880MHz

11.7

dB

1960MHz

9.6

11.1

12.6

dB

2140MHz

Output Power at 1dB Compression

22.4

dBm

880MHz

22.9

dBm

1960MHz

20.7

22.2

dBm

2140MHz

Output Third Order Intercept Point

38.0

dBm

880MHz, 5dBm per tone, 1MHz spacing,

38.5

dBm

1960MHz, 5dBm per tone, 1MHz spacing,

36.6

38.6

dBm

2140MHz, 5dBm per tone, 1MHz spacing,

IS-95 Channel Power

13.2

dBm

880MHz, -65dBc ACP, tested with 9 Channels

FWD

17.0

dBm

880MHz, -45dBc ACP

WCDMA Channel Power

9.5

dBm

2140MHz, -65dBc ACP, tested with 64 Channels

FWD

14.5

dBm

2140MHz, -45dBc ACP

Input Return Loss

16.0

20.0

dB

2140MHz

Output Return Loss

11.7

15.7

dB

2140MHz

Noise Figure

3.2

4.2

dB

2140MHz

Device Operating Voltage

5.0

V

Device Operating Current

118

128

138

mA

Thermal Resistance

45.0

°C/W

junction - lead