V23990-P704-F-PM

final data sheet

flow 90PACK 1 600V/ 30A

V23990-P704-F-01-14

Maximum Ratings / Höchstzulässige Werte

Parameter

Condition

Symbol

Datasheet values

Unit

max.

Transistor Inverter

Transistor Wechselrichter

Collector-emitter break down voltage

600

V

Kollektor-Emitter-Sperrspannung

DC collector current

T

27,5

A

Kollektor-Dauergleichstrom

35,6

Repetitive peak collector current

tp limited by Tj max

90

A

Periodischer Kollektorspitzenstrom

Power dissipation per IGBT

T

47,7

W

Verlustleistung pro IGBT

72

Gate-emitter peak voltage

±20

V

Gate-Emitter-Spitzenspannung

SC withstand time*

Tj”150°C

6us

Kurzschlußverhalten*

360

V

max. Chip temperature

T

jmax

175

°C

max. Chiptemperatur

Diode Inverter

Diode Wechselrichter

DC forward current

T

26

A

Dauergleichstrom

35,6

Repetitive peak forward current

tp limited by Tj max

60

A

Periodischer Spitzenstrom

Power dissipation per Diode

T

37

W

Verlustleistung pro Diode

55

max. Chip temperature

T

jmax

175

°C

max. Chiptemperatur

Thermal properties

Thermische Eigenschaften

Storage temperature

T

stg

-40…+125

°C

Lagertemperatur

Operation temperature

T

op

-40…+125

°C

Betriebstemperatur

Insulation properties

Modulisolation

Insulation voltage

t=1min

V

is

4000

Vdc

Isolationsspannung

Creepage distance

min 12,7

mm

Kriechstrecke

Clearance

min 12,7

mm

Luftstrecke

Additional notes and remarks:

* Allowed number of short circuits must be less than 1000 times, and time duration

between short circuits should be more than 1 second!

Copyright by Vincotech

1

Revision: 1