Features

1 of 11

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

RF MEMS

SGL0363Z

5MHz to 2000MHz LOW NOISE AMPLIFIER

SILICON GERMANIUM

RFMD’s SGL0363Z is a low power, low noise amplifier. It is designed for

2.7V to 3.3V battery operation. The matching networks are implemented

externally which allows for optimum narrow-band performance with 20dB

typical gain and 1.1dB noise figure from 200MHz to 900MHz. This RFIC

uses the latest Silicon Germanium HBT process.

RF Out

Simplified Device Schematic

Vpc

Gnd

RF In

Gnd

Active Bias

Network

Narrow-band

Matching

Network

Narrow-band

Matching

Network



Low Power Consumption,

5.7mA at 3.3V



External Input Noise Match



High Gain and Low Noise,

20dB and 1.1dB respectively

at 900MHz



Operates from 2.7V to 3.3V



Power Shutdown Capability

using VPC



500V ESD, Class 1B



Small Package: SOT-363



High input overdrive capabil-

ity, +18dBm

Applications



Low Power LNA for ISM, Cellu-

lar and Mobile Communica-

tions

DS111011



Package: SOT-363

SGL0363Z

5MHz to

2000MHz Low

Noise Ampli-

fier Silicon

Germanium

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

21.0

dB

200MHz

18.0

20.0

22.0

dB

900MHz

15.0

16.5

18.5

dB

1575MHz

Output Power at 1dB Compression

1.1

dBm

200MHz

2.5

dBm

900MHz

1.0

3.5

dBm

1575MHz

Output Third Order Intercept Point

17.2

dBm

200MHz

12.9

dBm

900MHz

11.0

14.0

dBm

1575MHz

Input Return Loss

14.0

dBm

200MHz

15.0

dBm

900MHz

8.5

10.0

dBm

1575MHz

Output Return Loss

20.0

dBm

200MHz

12.0

dBm

900MHz

14.0

20.0

dBm

1575MHz

Noise Figure

1.0

dBm

200MHz

1.1

dBm

900MHz

1.5

2.0

dBm

1575MHz

Reverse Isolation

24.0

dBm

200MHz

27.0

dBm

900MHz

Thermal Resistance

173

°C/W

junction - lead

Device Operating Current

3.5

5.2

7.0

mA

Band