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SGL0363Z Datasheet(PDF) 1 Page - RF Micro Devices |
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SGL0363Z Datasheet(HTML) 1 Page - RF Micro Devices |
1 / 11 page Features 1 of 11 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. RF MEMS SGL0363Z 5MHz to 2000MHz LOW NOISE AMPLIFIER SILICON GERMANIUM RFMD’s SGL0363Z is a low power, low noise amplifier. It is designed for 2.7V to 3.3V battery operation. The matching networks are implemented externally which allows for optimum narrow-band performance with 20dB typical gain and 1.1dB noise figure from 200MHz to 900MHz. This RFIC uses the latest Silicon Germanium HBT process. RF Out Simplified Device Schematic Vpc Gnd RF In Gnd Active Bias Network Narrow-band Matching Network Narrow-band Matching Network Low Power Consumption, 5.7mA at 3.3V External Input Noise Match High Gain and Low Noise, 20dB and 1.1dB respectively at 900MHz Operates from 2.7V to 3.3V Power Shutdown Capability using VPC 500V ESD, Class 1B Small Package: SOT-363 High input overdrive capabil- ity, +18dBm Applications Low Power LNA for ISM, Cellu- lar and Mobile Communica- tions DS111011 Package: SOT-363 SGL0363Z 5MHz to 2000MHz Low Noise Ampli- fier Silicon Germanium Parameter Specification Unit Condition Min. Typ. Max. Small Signal Gain 21.0 dB 200MHz 18.0 20.0 22.0 dB 900MHz 15.0 16.5 18.5 dB 1575MHz Output Power at 1dB Compression 1.1 dBm 200MHz 2.5 dBm 900MHz 1.0 3.5 dBm 1575MHz Output Third Order Intercept Point 17.2 dBm 200MHz 12.9 dBm 900MHz 11.0 14.0 dBm 1575MHz Input Return Loss 14.0 dBm 200MHz 15.0 dBm 900MHz 8.5 10.0 dBm 1575MHz Output Return Loss 20.0 dBm 200MHz 12.0 dBm 900MHz 14.0 20.0 dBm 1575MHz Noise Figure 1.0 dBm 200MHz 1.1 dBm 900MHz 1.5 2.0 dBm 1575MHz Reverse Isolation 24.0 dBm 200MHz 27.0 dBm 900MHz Thermal Resistance 173 °C/W junction - lead Device Operating Current 3.5 5.2 7.0 mA Test Conditions: VS=3.3V, ID=5.2mA Typ., IIP3 Tone Spacing=1MHz, POUT per tone=-15dBm, TL=25°C, ZS=ZL=50, Different Application Circuit per Band |
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