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FZ06NPA070FP Datasheet(PDF) 5 Page - Vincotech

Part # FZ06NPA070FP
Description  neutral point clamped inverter
Download  25 Pages
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Manufacturer  VINCOTECH [Vincotech]
Direct Link  http://www.vincotech.com
Logo VINCOTECH - Vincotech

FZ06NPA070FP Datasheet(HTML) 5 Page - Vincotech

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FZ06NPA070FP
preliminary datasheet
Parameter
Symbol
Unit
VGE [V] or
VGS [V]
Vr [V]
or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
Min
Typ
Max
Value
Conditions
Characteristic Values
Tj=25°C
5
5.8
6.5
Tj=125°C
Tj=25°C
1
1.49
2.1
Tj=125°C
1.6
Tj=25°C
0.03
Tj=125°C
Tj=25°C
650
Tj=125°C
Tj=25°C
37
Tj=125°C
35
Tj=25°C
13
Tj=125°C
16
Tj=25°C
459
Tj=125°C
500
Tj=25°C
83
Tj=125°C
106
Tj=25°C
0.81
Tj=125°C
1.11
Tj=25°C
1.35
Tj=125°C
1.71
Thermal resistance chip to heatsink per chip
RthJH
Thermal grease
thickness
≤50um
λ = 1 W/mK
1.11
K/W
Tj=25°C
9.07
Tj=125°C
9.43
Thermal resistance chip to heatsink per chip
RthJH
Thermal grease
thickness
≤50um
λ = 1 W/mK
4.36
K/W
Tj=25°C
1.5
2.44
3.5
Tj=125°C
2.01
Tj=25°C
100
Tj=125°C
Tj=25°C
80
Tj=125°C
100
Tj=25°C
33
Tj=125°C
109
Tj=25°C
2.7
Tj=125°C
6
di(rec)max
Tj=25°C
11226
/dt
Tj=125°C
8793
Tj=25°C
0.61
Tj=125°C
1.52
Thermal resistance chip to heatsink per chip
RthJH
Thermal grease
thickness
≤50um
λ = 1 W/mK
2.04
K/W
R25
Tol. ±13%
Tj=25°C
19.1
22
24.9
k
Ω
R100
Tol. ±5%
Tj=100°C
1411
1486
1560
Ω
* see details on Thermistor charts on Figure 2.
μC
V
V
μA
ns
A
Boost IGBT
Gate emitter threshold voltage
Turn-off energy loss per pulse
QGate
Eoff
Turn-on energy loss per pulse
Gate charge
Input capacitance
Output capacitance
Crss
Peak reverse recovery current
Reverse recovered charge
Turn-off delay time
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Turn-on delay time
Rise time
Integrated Gate resistor
Gate-emitter leakage current
Boost Diode
Diode forward voltage
VF
Boost Inverse Diode
VGE(th)
VCE(sat)
td(off)
Reverse transfer capacitance
Eon
ICES
Fall time
0
15
Coss
Cies
15
0
600
0
±15
20
tf
tr
td(on)
Rgint
Rgon=8
Ω
ns
mWs
Ω
mA
nA
V
nC
pF
137
Tj=25°C
4000
K
A/
μs
mWs
75
Tj=25°C
Power dissipation
P
mW
210
Rated resistance*
B-value
B(25/100)
Tol. ±3%
IGES
VCE=VGE
V
40
none
Reverse recovery energy
trr
Qrr
Erec
Reverse recovery time
Peak rate of fall of recovery current
Thermistor
Diode forward voltage
Reverse leakage current
VF
Ir
IRRM
Rgoff=8
Ω
f=1MHz
30
20
40
Rgon=8
Ω
350
1200
350
25
480
70
0.0012
Tj=25°C
Tj=25°C
288
4620
470
copyright Vincotech
5
Revision: 5


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