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ZXTN4000Z Datasheet(PDF) 2 Page - Diodes Incorporated |
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ZXTN4000Z Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 5 page ZXTN4000Z Datasheet Number: DS35676 Rev. 1 - 2 2 of 5 www.diodes.com January 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN4000Z Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 7 V Continuous Collector Current IC 1 A Peak Pulse Current (Note 4) ICM 3 A Base Current IB 500 mA Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 1.5 W Thermal Resistance, Junction to Ambient (Note 5) RθJA 83 °C/W Thermal Resistance, Junction to Leads (Note 6) RθJL 28 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%. 5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions 6. Thermal resistance from junction to solder-point (at the end of the collector lead). Thermal Characteristics and Derating information |
Similar Part No. - ZXTN4000Z_15 |
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Similar Description - ZXTN4000Z_15 |
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