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SGA9189Z-EVB4 Datasheet(PDF) 2 Page - RF Micro Devices |
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SGA9189Z-EVB4 Datasheet(HTML) 2 Page - RF Micro Devices |
2 / 5 page 2 of 5 DS121018 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SGA9189Z Typical Performance with Engineering Application Circuit Typical Performance with Engineering Application Circuit Data above represents typical performance of the application circuits notes in Application Note AN-021. Refer to the applica- tion note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing instructions and other key issues to be considered. For the latest application notes please visit our site at wwww.RFMD.com or call your local sales representative. Absolute Maximum Ratings Parameter Rating Unit Max Base Current (IB) 5 mA Max Device Current (ICE) 200 mA Max Collector-Emitter Voltage (VCEO) 7 V Max Collector-Base Voltage (VCBO) 20 V Max Emitter-Base Voltage (VEBO) 4.8 V Max Junction Temp (TJ) +150 °C Operating Temp Range (TL) See Graph Max Storage Temp +150 °C *Note: Load condition1, ZL = 50. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL)/RTH, j - l and TL = TLEAD Freq (MHz) VCE (V) ICQ (mA) P1dB (dBm) OIP31 (dBm) Gain (dB) S11 (dB) S22 (dB) NF (dB) ZSOPT ( ) ZLOPT ( ) 945 5 184 25.8 39.5 18.8 -14 -26 2.1 6.8 -j0.85 16 + j5.9 1960 5 179 25.5 40.0 12.2 -23 -21 2.4 7.6 - j11.2 22.8 + j0.7 2140 5 180 25.4 39.0 11.3 -20 -14 2.6 18.1 + j3.4 23.8 - j9.0 2440 5 180 25.4 40.0 10.2 -20 -17 2.7 5.6 - j15.1 23.1 - j2.7 1 POUT = +10dBm per tone for VCE = 5V, 1MHz tone spacing Freq (MHz) VCE (V) ICQ (mA) P1dB (dBm) OIP32 (dBm) Gain (dB) S11 (dB) S22 (dB) NF (dB) ZSOPT ( ) ZLOPT ( ) 945 3 165 22.1 34.3 17.7 -18 -11 2.1 9.6 - j1.6 11.0 + j1.4 1960 3 162 22.4 35.0 11.8 -18 -16 2.2 7.8 - j13.1 19.3 - j2.9 2440 3 165 23.2 35.3 9.9 -20 -15 2.6 8.1 - j16.0 21.0 - j6.5 2 POUT = +6dBm per tone for VCE = 3V, 1MHz tone spacing Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Maximum Recommended Operational Dissipated Power 0.00 0.20 0.40 0.60 0.80 1.00 1.20 -40 -10 20 50 80 110 140 Lead Temperature (C) Operational Limit (Tj<130C) Z SOPT E B C Z LOPT |
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