2N3773_13 datasheet(2/5 Pages) ONSEMI

Part #	2N3773

Description	NPN Power Transistors 16 A NPN POWER TRANSISTORS 140 V, 150 W

Download	5 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

2 / 5 page

2N3773

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS (Note 3)

Collector−Emitter Breakdown Voltage (Note 4)

(IC = 0.2 Adc, IB = 0)

VCEO(sus)

140

−

Vdc

Collector−Emitter Sustaining Voltage (Note 4)

(IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms)

VCEX(sus)

160

−

Vdc

Collector−Emitter Sustaining Voltage

(IC = 0.2 Adc, RBE = 100 Ohms)

VCER(sus)

150

−

Vdc

Collector Cutoff Current (Note 4)

(VCE = 120 Vdc, IB = 0)

ICEO

−

10

mAdc

Collector Cutoff Current (Note 4)

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)

ICEX

−

2

10

mAdc

Collector Cutoff Current

(VCB = 140 Vdc, IE = 0)

ICBO

−

2

mAdc

Emitter Cutoff Current (Note 4)

(VBE = 7 Vdc, IC = 0)

IEBO

−

5

mAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 8 Adc, VCE = 4 Vdc) (Note 4)

(IC = 16 Adc, VCE = 4 Vdc)

hFE

15

5

60

−

Collector−Emitter Saturation Voltage

(IC = 8 Adc, IB = 800 mAdc) (Note 4)

(IC = 16 Adc, IB = 3.2 Adc)

VCE(sat)

−

1.4

4

Vdc

Base−Emitter On Voltage (Note 4)

(IC = 8 Adc, VCE = 4 Vdc)

VBE(on)

−

2.2

Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common−Emitter

Small−Signal, Short−Circuit, Forward Current Transfer Ratio

(IC = 1 A, f = 50 kHz)

|hfe|

4

−

Small−Signal Current Gain (Note 4)

(IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz)

hfe

40

−

SECOND BREAKDOWN CHARACTERISTICS

Second Breakdown Collector Current with Base Forward Biased

t = 1 s (non−repetitive), VCE = 100 V, See Figure 12

IS/b

1.5

−

Adc

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.

4. Indicates JEDEC Registered Data.

ORDERING INFORMATION

Device

Package

Shipping†

2N3773G

TO−204

(Pb−Free)

100 Unit / Tray

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-

cations Brochure, BRD8011/D.

Similar Part No. - 2N3773_13

Manufacturer	Part #	Datasheet	Description
Unisonic Technologies	2N3773	154Kb / 3P	COMPLEMENTARY SILICON TRANSISTORS
Quanzhou Jinmei Electro...	2N3773	178Kb / 3P	Silicon NPN Power Transistors
Unisonic Technologies	2N3773	186Kb / 3P	COMPLEMENTARY SILICON TRANSISTORS
Inchange Semiconductor ...	2N3773	220Kb / 2P	isc Silicon NPN Power Transistor

More results

Similar Description - 2N3773_13

Manufacturer	Part #	Datasheet	Description
Thinki Semiconductor Co...	2SC5200	424Kb / 2P	150 Watt Silicon NPN Power Transistors
ON Semiconductor	MJW21192	73Kb / 6P	8.0 A POWER TRANSISTORS COMPLEMENTARY SILICON 150 V, 125 W June, 2005 ??Rev. 2
ON Semiconductor	2N5038	84Kb / 3P	NPN Silicon Transistors 20 AMPERE POWER TRANSISTORS 90 VOLTS - 140 WATTS August, 2007 - Rev. 12
NXP Semiconductors	BC635	152Kb / 15P	45 V, 1 A NPN medium power transistors Rev. 07 - 4 June 2007
	BC637	161Kb / 15P	60 V, 1 A NPN medium power transistors Rev. 07-25 June 2007
	BCX56-16.115	161Kb / 15P	80 V, 1 A NPN medium power transistors Rev. 08-22 June 2007
	BC635	160Kb / 15P	45 V, 1 A NPN medium power transistors Rev. 07-4 June 2007
Nexperia B.V. All right...	BC55PA_SER	250Kb / 12P	60 V, 1 A NPN medium power transistors Rev. 9 - 1 July 2022
	BC56PA_SER	250Kb / 13P	80 V, 1 A NPN medium power transistors Rev. 10 - 1 July 2022
	BCX56T_SER	239Kb / 12P	80 V, 1 A NPN power bipolar transistors Rev. 1 - 22 August 2019

More results

2N3773 Datasheet(PDF) 2 Page - ON Semiconductor

2N3773 Datasheet(HTML) 2 Page - ON Semiconductor

Similar Part No. - 2N3773_13

Similar Description - 2N3773_13

Html Pages

1 2 3 4 5

Datasheet Download

Link URL