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KTA1001 Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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KTA1001 Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 2 page  DIM A B D E G H K 4.70 MAX 2.50 0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX 1.50 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 SOT-89 C J G D 12 3 2. COLLECTOR (HEAT SINK) A C K F MILLIMETERS H 1. BASE 3. EMITTER FF D +_ +_ 1994. 3. 21 1/2 SEMICONDUCTOR TECHNICAL DATA KTA1001 EPITAXIAL PLANAR PNP TRANSISTOR Revision No : 0 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -100 nA Emitter Cut-off Current IEBO VEB=-8V, IC=0 - - -100 nA Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -20 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-1mA, IC=0 -8 - - V DC Current Gain hFE(1) (Note2) VCE=-2V, IC=-0.5A 100 - 320 hFE(2) VCE=-2V, IC=-3A 70 - - Collector-Emitter Saturation Voltage VCE(sat) IC=-3A, IB=-75mA - - -0.5 V Base-Emitter Voltage VBE VCE=-2V, IC=-3A - - -1.5 V Transition Frequency fT VCE=-2V, IC=-0.5A - 170 - MHz Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 62 - pF CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -8 V Collector Current DC IC -3 A Pulse (Note1) ICP -5 A Base Current IB -0.5 A Collector Power Dissipation Ta=25 PC 0.5 W Tc=25 * 1 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note1 : Pulse Test : Pulse width=10ms(Max.) Duty cycle=30%(Max.) *Pc : KTA1001 mounted on ceramic substrate(250mm 2x0.8t) Note2 : hFE(1) Classification 0:100 200, Y:160 320 CAMERA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES hFE=100 320 (VCE=-2V, IC=-0.5A). hFE=70(Min.) (VCE=-2V, IC=-3A). Low Collector Saturation Voltage. : VCE(sat)=-0.5V(Max.) (IC=-3A, IB=-75mA). High Power Dissipation. : PC=1W(Tc=25 ), PC=0.5W(Ta=25 ). MAXIMUM RATING (Ta=25 ) Type Name h Rank FE Lot No. Marking |
Similar Part No. - KTA1001_15 |
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Similar Description - KTA1001_15 |
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