PD - 95176

10/6/04

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Generation V Technology

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Ultra Low On-Resistance

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Dual N-Channel Mosfet

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Surface Mount

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Available in Tape & Reel

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Dynamic dv/dt Rating

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Fast Switching

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing

techniques to achieve the lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and ruggedized device design that

HEXFET Power MOSFETs are well known for, provides the designer with an

extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced

thermal characteristics and multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple devices can be used in

an application with dramatically reduced board space. The package is designed

for vapor phase, infra red, or wave soldering techniques. Power dissipation of

greater than 0.8W is possible in a typical PCB mount application.

IRF7301PbF

SO-8

D1

D1

D2

D2

G1

S2

G2

S1

Top View

8

1

2

3

4

5

6

7

Parameter

Max.

Units

5.7

5.2

4.1

Pulsed Drain Current 

21

Power Dissipation

2.0

W

Linear Derating Factor

0.016

W/°C

Gate-to-Source Voltage

± 12

V

dv/dt

Peak Diode Recovery dv/dt ‚

5.0

V/ns

Junction and Storage Temperature Range

-55 to + 150

°C

Absolute Maximum Ratings

A

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

Maximum Junction-to-Ambient„

–––

62.5

°C/W

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Lead-Free