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IRF6810STRPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF6810STRPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 9 page  08/08/11 www.irf.com 1 IRF6810STRPbF IRF6810STR1PbF Applicable DirectFET Outline and Substrate Outline Typical values (unless otherwise specified) DirectFET® plus ISOMETRIC Description The IRF6810STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6810STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6810STRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus converters. Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.601mH, RG = 50Ω, IAS = 13A. Notes: S1 S2 SB M2 M4 L4 L6 L8 PD -96393 S1 0 5 10 15 20 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 VDS= 20V VDS= 13V VDS= 5V ID= 13A 0 2 4 6 8 10 12 14 16 VGS, Gate -to -Source Voltage (V) 0 5 10 15 ID = 16A TJ = 25°C TJ = 125°C D D S G VDSS VGS RDS(on) RDS(on) 25V max ±16V max 4.0mΩ @ 10V 5.6mΩ @ 4.5V Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A V A 51 Max. 13 50 130 ±16 25 16 13 Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 7.4nC 2.7nC 0.98nC 12nC 8.9nC 1.6V DirectFET® plus Power MOSFET l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET Application l Compatible with existing Surface Mount Techniques l 100% Rg tested l Footprint compatible to DirectFET |
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