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IRF6797MTRPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF6797MTRPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 9 page  www.irf.com 1 03/16/09 IRF6797MPbF IRF6797MTRPbF HEXFET® Power MOSFET plus Schottky Diode Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance vs. Gate Voltage Typical values (unless otherwise specified) Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.57mH, RG = 25Ω, IAS = 30A. Notes: DirectFET ISOMETRIC MX SQ SX ST MQ MX MT MP Description The IRF6797MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6797MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6797MPbF has been optimized for parameters that are critical in synchronous buck converter’s Sync FET sockets. l RoHs Compliant Containing No Lead and Bromide l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested 0 20406080 100 120 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 VDS= 20V VDS= 13V ID= 30A VDSS VGS RDS(on) RDS(on) 25V max ±20V max 1.1m Ω@ 10V 1.8mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 45nC 13nC 6.2nC 38nC 38nC 1.8V Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A Max. 29 210 300 ±20 25 36 260 30 0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) 0 1 2 3 4 ID = 36A TJ = 25°C TJ = 125°C PD - 97320A |
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