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SGA1263ZSR Datasheet(PDF) 1 Page - RF Micro Devices |
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1 / 6 page Features 1 of 6 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. InP HBT LDMOS RF MEMS SGA1263Z DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for application to 4GHz. This RFIC is a 2-stage design that pro- vides high isolation of up to 40dB at 2GHz and is fabricated using the lat- est SiGe HBT 50GHz FT process, featuring one-micron emitters with VCEO>7V. These unconditionally stable amplifiers have less than 1dB gain drift over 125°C operating range (-40°C to +85°C) and are ideal for use as buffer amplifiers in oscillator applications covering cellular, ISM, and narrowband PCS bands. -8 0 -6 0 -4 0 -2 0 0 dB Frequency MHz Isolation vs. Frequency DCto4000MHz Operation Single Supply Voltage Excellent Isolation, >50dB at 900MHz 50 In/Out, Broadband Match for Operation from DC- 4GHz Unconditionally Stable Applications Buffer Amplifier for Oscillator Applications Broadband Gain Blocks IF Amp DS111011 Package: SOT-363 SGA1263Z DCto4000MH z Silicon Ger- manium HBT Cascadable Gain Block Parameter Specification Unit Condition Min. Typ. Max. Small Signal Gain 15 17 19 dB 850MHz 12 15 17 dB 1950MHz Output Power at 1dB Compression -13.0 -9.5 dBm 1950MHz Output Third Order Intercept Point -1.5 1.0 dBm 1950MHz Determined by Return Loss (<-10dB) MHz Input Return Loss 9.5 11.2 dB 1950MHz Output Return Loss 7 8 dB 1950MHz Noise Figure 2.5 4.0 dB 1950MHz Device Voltage 2.5 2.8 3.1 V Thermal Resistance 255 °C/W Test Conditions: VS=5V, ID=8mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-20dBm, RBIAS=270, TL=25°C, ZS=ZL=50 |
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