Electronic Components Datasheet Search |
|
SBB5089ZSQ Datasheet(PDF) 1 Page - RF Micro Devices |
|
SBB5089ZSQ Datasheet(HTML) 1 Page - RF Micro Devices |
1 / 10 page Features 1 of 10 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. RF MEMS SBB5089Z 50MHz to 6000MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER RFMD’s SBB5089Z is a high performance InGaP HBT MMIC amplifier uti- lizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SBB5089Z does not require a dropping resistor as compared to typical Darlington amplifi- ers. The SBB5089Z product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is internally matched to 50 . Gain and Return Loss versus Frequency (with BiasTees) -40.0 -30.0 -20.0 -10.0 0.0 10.0 20.0 30.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency (GHz) 25C 25C 25C Wideband Flat Gain to 4GHz: ±1.1dB P1dB=20.4dBm at 1950MHz Single Fixed 5V Supply Robust 1000V ESD, Class 1C Patented Thermal Design and Bias Circuit Low Thermal Resistance Applications PA Driver Amplifier Cellular, PCS, GSM, UMTS Wideband Intrumentation Wireless Data, Satellite Termi- nals DS150622 Package: SOT-89 SBB5089Z Parameter Specification Unit Condition Min. Typ. Max. Small Signal Gain 19.0 20.5 22.0 dB 850MHz 18.3 19.0 21.5 dB 1950MHz 14.5 15.5 17.5 dB 6000MHz Output Power at 1dB Compression 20.5 dBm 850MHz 19.0 20.0 dBm 1950MHz Third Order Intercept Point 38.5 dBm 850MHz 33.0 35.0 dBm 1950MHz Bandwidth 3000 MHz Min. 10dB return loss (typ.) Input Return Loss 10.0 13.0 dB 1950MHz Output Return Loss 10.0 14.0 dB 1950MHz Reverse Isolation 23.3 dB 1950MHz Noise Figure 3.9 4.9 dB 1950MHz Device Operating Voltage 4.75 5.0 5.25 V Device Operating Current 60.0 75.0 92.0 mA Thermal Resistance 69.9 °C/W junction - lead Test Conditions: VD=5V, ID=75mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-dBm, TL=25°C, ZS=ZL=50Tested with Bias Tees |
Similar Part No. - SBB5089ZSQ |
|
Similar Description - SBB5089ZSQ |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |