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SBB5089Z Datasheet(PDF) 2 Page - RF Micro Devices |
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SBB5089Z Datasheet(HTML) 2 Page - RF Micro Devices |
2 / 10 page 2 of 10 DS150622 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBB5089Z Typical Performance at Key Operating Frequencies (0.5GHz to 3.5GHz Application Circuit) Absolute Maximum Ratings Parameter Rating Unit Device Current (ID)100 mA Max Device Voltage (VD) 5.5 V Max RF Input Power 24 dBm Max Operating Dissipated Power 0.55 W Junction Temp (TJ)+150 °C Operating Temp Range (TL) -40 to +105 °C Storage Temp Range -40 to +150 °C ESD Rating - Human Body Model (HBM) Class 1C Moisture Sensitivity Level MSL2 Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD Parameter Specification Unit Condition Min. Typ. Max. Small Signal Gain 21.1 dB 50MHz 20.9 dB 100MHz 20.8 dB 200MHz 20.8 dB 500MHz 20.8 dB 850MHz 20.1 dB 1950MHz 19.8 dB 2500MHz 18.7 dB 3500MHz 17.8 dB 4000MHz Output Third Order Intercept Point 36 dBm 50MHz 37.8 dBm 100MHz 37.5 dBm 200MHz 38.6 dBm 500MHz 39.2 dBm 850MHz 34.9 dBm 1950MHz 32.8 dBm 2500MHz 29.4 dBm 3500MHz 26.8 dBm 4000MHz Output Power at 1dB Compression 19.4 dBm 50MHz 19.7 dBm 100MHz 20 dBm 200MHz 20.5 dBm 500MHz 20.4 dBm 850MHz 20.4 dBm 1950MHz 19.4 dBm 2500MHz 16.9 dBm 3500MHz 14.7 dBm 4000MHz Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. |
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