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NGTB40N120IHLWG Datasheet(PDF) 6 Page - ON Semiconductor |
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NGTB40N120IHLWG Datasheet(HTML) 6 Page - ON Semiconductor |
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6 / 8 page  NGTB40N120IHLWG http://onsemi.com 6 TYPICAL CHARACTERISTICS Figure 18. IGBT Transient Thermal Impedance PULSE TIME (sec) Figure 19. Diode Transient Thermal Impedance PULSE TIME (sec) 50% Duty Cycle 20% 10% 5% 2% 1% Single Pulse 50% Duty Cycle 20% 10% 5% 2% 1% Single Pulse 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 RqJC = 0.48 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 100 RqJC = 1.5 Junction Case C1 C2 R1 R2 Rn Ci = ti/Ri Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Cn ti (sec) 1.0E−4 1.76E−4 0.002 0.03 0.1 2.0 Ri (°C/W) 0.01616 0.04030 0.060 0.090 0.176 0.093 Junction Case C1 C2 R1 R2 Rn Ci = ti/Ri Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Cn ti (sec) 1.48E−4 0.002 0.03 0.1 2.0 Ri (°C/W) 0.19655 0.414 0.5 0.345 0.0934 Figure 20. Test Circuit for Switching Characteristics |
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