The RF Line

Microwave Linear

Power Transistors

• Designed for Class A, Common Emitter Linear Power Amplifiers.

• Specified 20 Volt, 1.6 GHz Characteristics:

MRF3104

MRF3105

MRF3106

Output Power

0.5 W

0.8 W

1.6 W

Power Gain

10.5 dB

9 dB

8 dB

• Low Parasitic Microwave Stripline Package

• Gold Metalization for Improved Reliability

• Diffused Ballast Resistors

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

22

Vdc

Collector–Emitter Voltage

50

Vdc

Emitter–Base Voltage

3.5

Vdc

Collector Current

MRF3104, MRF3105

MRF3106

0.4

0.8

Adc

Operating Junction Temperature

200

°C

Storage Temperature

–65 to +125

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case, DC

MRF3104

MRF3105

MRF3106

40

35

22

°C/W

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

22

—

—

Vdc

Collector–Emitter Breakdown Voltage

50

—

—

Vdc

Collector–Base Breakdown Voltage

45

—

—

Vdc

Emitter–Base Breakdown Voltage

3.5

—

—

Vdc

Collector Cutoff Current

MRF3104, MRF3105

MRF3106

—

—

—

—

0.25

0.5

mAdc

ON CHARACTERISTICS

DC Current Gain

20

35

120

—

(continued)

MRF3104

MRF3105

MRF3106

8.0–12 dB GAIN

1.55–1.65 GHz

MICROWAVE LINEAR

POWER TRANSISTORS

CASE 305A–01, STYLE 1

(.204

″ PILL)

Order this document

by MRF3104/D

SEMICONDUCTOR TECHNICAL DATA

1

REV 6