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KTD1047B Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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KTD1047B Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 3 page  2011. 3. 18 1/3 SEMICONDUCTOR TECHNICAL DATA KTD1047B TRIPLE DIFFUSED NPN TRANSISTOR Revision No : 0 HIGH POWER AMPLIFIER APPLICATION. FEATURES ・Complementary to KTB817B. ・Recommended for 60W Audio Frequency Amplifier Output Stage. MAXIMUM RATING (Ta=25 ℃) TO-3P(N)-E K A D B d PP T Q 1 2 3 M N O E A MILLIMETERS DIM B C D d E F G H I J K L O N P Q M 19.90 0.20 2.00 0.20 1.00 0.20 3.00 0.20 3.80 0.20 3.50 0.20 13.90 0.20 12.76 0.20 23.40 0.20 1.5+0.15-0.05 16.50 0.30 1.40 0.20 13.60 0.20 9.60 0.20 5.45 0.30 R T 0.60+0.15-0.05 15.60 0.20 + _ 4.80 0.20 + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ 3.20 0.10 + _ 18.70 0.20 + _ 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 ℃) Note : hFE(1) Classification O:60～120, Y:100～200 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage VEBO 6 V Collector Current DC IC 12 A Pulse ICP 15 Collector Power Dissipation (Tc=25 ℃) PC 100 W Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 ～150 ℃ CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=80V, IE=0 - - 0.1 mA Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.1 mA DC Current Gain hFE (1) (Note) VCE=5V, IC=1A 60 - 200 hFE 2 VCE=5V, IC=6A 20 - Collector-Emitter Saturation Voltage VCE(sat) IC=5A, IB=0.5A - - 2.5 V Base-Emitter Voltage VBE(ON) VCE=5V, IC=1A - - 1.5 V Transition Frequency fT VCE=5V, IC=1A - 15 - MHz Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 210 - pF Turn On Time ton VCC=20V IC=1A=10・IB1=-10・IB2 RL=20Ω - 0.26 - μS Fall Time tf - 0.68 - Storage Time tstg - 6.88 - |
Similar Part No. - KTD1047B_15 |
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Similar Description - KTD1047B_15 |
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