ZXMN6A08E6Q_15 datasheet(5/8 Pages) DIODES

Part #	ZXMN6A08E6Q

Description	60V N-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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5 / 8 page

ZXMN6A08E6Q

Document Number DS36690 Rev. 3 - 2

5 of 8

www.diodes.com

March 2015

ZXMN6A08E6Q

Typical Characteristics

0.1

1

10

0.1

1

10

0.1

1

10

0.01

0.1

1

10

2

3

4

5

0.01

0.1

1

10

-50

0

50

100

150

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.1

1

10

0.1

1

0.2

0.4

0.6

0.8

1.0

1.2

0.01

0.1

1

10

10V

4V

4.5V

3.5V

5V

Output Characteristics

T = 25°C

3V

V

GS

V

DS

Drain-Source Voltage (V)

10V

5V

2V

2.5V

4V

3V

Output Characteristics

T = 150°C

V

GS

3.5V

V

DS

Drain-Source Voltage (V)

Typical Transfer Characteristics

V

DS

= 10V

T = 25°C

T = 150°C

V

GS

Gate-Source Voltage (V)

Normalised Curves v Temperature

R

DS(on)

V

GS

= 10V

I

D

= 4.8A

V

GS(th)

V

GS

= V

DS

I

D

= 250uA

Tj Junction Temperature (°C)

7V

3V

10V

4.5V

5V

4V

On-Resistance v Drain Current

T = 25°C

3.5V

V

GS

I

D

Drain Current (A)

V

GS

= 0V

T = 150°C

T = 25°C

Source-Drain Diode Forward Voltage

V

SD

Source-Drain Voltage (V)

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ZXMN6A08E6Q Datasheet(PDF) 5 Page - Diodes Incorporated

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