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TK4A53D Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TK4A53D Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page TK4A53D 2010-09-28 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A53D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.3 Ω(typ.) • High forward transfer admittance: |Yfs| = 3.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 525 V) • Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 525 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 4 Drain current Pulse (Note 1) IDP 16 A Drain power dissipation (Tc = 25°C) PD 35 W Single pulse avalanche energy (Note 2) EAS 252 mJ Avalanche current IAR 4 A Repetitive avalanche energy (Note 3) EAR 3.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C(initial), L = 27 mH, RG = 25 Ω, IAR = 4 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm Ф 3.2 ± 0.2 10 ± 0.3 2.7 ± 0.2 A 1.14 ± 0.15 0.69 ± 0.15 2.54 2.54 1 2 3 M Ф 0.2 A 1: Gate 2: Drain 3: Source JEDEC ⎯ JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ.) Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 3.57 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W 1 3 2 |
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