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KTA1040D Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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KTA1040D Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 2 page  2003. 3. 27 1/2 SEMICONDUCTOR TECHNICAL DATA KTA1040D/L EPITAXIAL PLANAR PNP TRANSISTOR Revision No : 5 GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. FEATURES ・Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. ・Straight Lead (IPAK, "L" Suffix) ・Complementary to KTC2020D/L. MAXIMUM RATING (Ta=25 ℃) ELECTRICAL CHARACTERISTICS (Ta=25 ℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -7 V Collector Current IC -3 A Base Current IB -0.5 A Collector Power Dissipation Ta=25 ℃ PC 1.0 W Tc=25 ℃ 20 Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 ～150 ℃ CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-60V, IE=0 - - -100 μA Emitter Cut-off Current IEBO VEB=-7V, IC=0 - - -100 μA Collector-Emitter Breakdown Voltage V(BR)CEO IC=-50mA, IB=0 -60 - - V DC Current Gain hFE(1)(Note) VCE=-5V, IC=-0.5A 100 - 300 hFE(2) VCE=-5V, IC=-3A 20 - - Collector Emitter Saturation Voltage VCE(sat) IC=-2A, IB=-0.2A - -0.25 -1.0 V Base-Emitter Voltage VBE VCE=-5V, IC=-0.5A - -0.7 -1.0 V Transition Frequency fT VCE=-5V, IC=-0.5A - 30 - MHz Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 45 - pF Switching Time Turn-on Time ton - 0.4 - μS Storage Time tstg - 1.7 - Fall Time tf - 0.5 - Note : hFE(1) Classification Y:100~200, GR:150~300. |
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