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KU310N10D Datasheet(PDF) 2 Page - KEC(Korea Electronics) |
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KU310N10D Datasheet(HTML) 2 Page - KEC(Korea Electronics) |
2 / 7 page 2012. 7. 6 2/7 KU310N10D Revision No : 2 ELECTRICAL CHARACTERISTICS (Tc=25 ℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250μ A, VGS=0V 100 - - V Breakdown Voltage Temperature Coefficient ΔBV DSS/ΔTj ID=5mA, Referenced to 25℃ - 0.10 - V/ ℃ Drain Cut-off Current IDSS VDS=100V, VGS=0V, - - 10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μ A 2.0 - 4.0 V Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA Drain-Source ON Resistance RDS(ON) VGS=10V, ID=13.5A - 25 31 m Ω Dynamic Total Gate Charge Qg VDS=80V, ID=34A VGS=10V (Note4,5) - 49 - nC Gate-Source Charge Qgs - 10 - Gate-Drain Charge Qgd - 14 - Turn-on Delay time td(on) VDD=50V ID=34A RG=25Ω (Note4,5) - 30 - ns Turn-on Rise time tr - 32 - Turn-off Delay time td(off) - 115 - Turn-off Fall time tf - 40 - Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz - 2230 - pF Output Capacitance Coss - 170 - Reverse Transfer Capacitance Crss - 85 - Source-Drain Diode Ratings Continuous Source Current IS VGS<Vth - - 34 A Pulsed Source Current ISP - - 136 Diode Forward Voltage VSD IS=13.5A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=34A, VGS=0V, dIs/dt=300A/ μs - 53 - ns Reverse Recovery Charge Qrr - 0.11 - μC Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =35 μH, I S=34A, VDD=80V, RG=25Ω, Starting Tj=25℃. Note 3) IS≤34A, dI/dt≤200A/㎲, VDD≤BVDSS, Starting Tj=25℃. Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. Marking |
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