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SEMICONDUCTOR

TECHNICAL DATA

KML0D4P20E

P-Ch Trench MOSFET

Revision No : 2

General Description

It s Mainly Suitable for Load Switching Mobile Phones, Battery Powered

Systems and Level-Shifter.

FEATURES

・V

・Drain-Soure ON Resistance

・ESD Protection diode.

MAXIMUM RATING (Ta=25

℃)

Note 1) Drain current limited by maximum junction temperature

Note 2) Surface Mounted on 1

˝×1˝ FR4 Board

CHARACTERISTIC

SYMBOL

P-Ch

UNIT

Drain-Source Voltage

-20

V

Gate-Source Voltage

±6

V

Drain Current

(Note 1)

-350

mA

(Note 1)

-255

Pulsed

(Note 1)

-1400

Drain Power Dissipation

(Note 2)

210

mW

Maximum Junction Temperature

150

℃

Storage Temperature Range

-55

～150

℃

Thermal Resistance, Junction to Ambient (Note 2)

600

℃/W