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1

Specifications Subject to Change Without Notice.

V3.00

High Q Hyperabrupt

Tuning Varactors

MA4ST550 Series

Features

q

High Q

q

Usable Capacitance Change of 7:1

q

Low Reverse Leakage for Good Post

Tuning Drift Characteristics

q

Reproducible C-V Curves

Description

The MA4ST550 family of high Q Silicon Hyperabrupt

Tuning Varactors is available in a series of low parasitic

capacitance microwave packages or in chip form.

The MA4ST550 series of diodes is available with junction

capacitances of approximately 0.8 pF to 8.2 pF at -4 volts.

These diodes have capacitance change ratios as high

as 7:1.

Applications

The MA4ST550 series is appropriate for use in VCOs with

frequencies within the range of approximately 1-14 GHz

where a large capacitance change is required. These

diodes are suited for VCOs in missile seekers, telecom-

munication systems and electronic warfare systems with

critical post tuning drift specifications.

Environmental Performance

All tuning varactors in ceramic packages are capable of

meeting the performance tests dictated by the methods

and procedures of the latest revisions of MIL-S-19500, MIL-

STD-202 and MIL-STD-750 which specify mechanical,

electrical, thermal and other environmental tests common

to semiconductor products.

Case Styles

134

30

31

Absolute Maximum Ratings at 25°C

Parameter

Absolute Maximum

Reverse Voltage

Same as Breakdown Voltage

Operating Temperature

- 65°C to +150°C

Storage Temperature

- 65°C to +200°C

Temperature Coefficient

400 ppm/°C at -4 Volts