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MA4ST551 Datasheet(PDF) 1 Page - Tyco Electronics |
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MA4ST551 Datasheet(HTML) 1 Page - Tyco Electronics |
1 / 3 page M/A-COM, Inc. North America: Tel. (800) 366-2266 s Asia/Pacific: Tel. +81 (03) 3226-1671 s Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020 1 Specifications Subject to Change Without Notice. V3.00 High Q Hyperabrupt Tuning Varactors MA4ST550 Series Features q High Q q Usable Capacitance Change of 7:1 q Low Reverse Leakage for Good Post Tuning Drift Characteristics q Reproducible C-V Curves Description The MA4ST550 family of high Q Silicon Hyperabrupt Tuning Varactors is available in a series of low parasitic capacitance microwave packages or in chip form. The MA4ST550 series of diodes is available with junction capacitances of approximately 0.8 pF to 8.2 pF at -4 volts. These diodes have capacitance change ratios as high as 7:1. Applications The MA4ST550 series is appropriate for use in VCOs with frequencies within the range of approximately 1-14 GHz where a large capacitance change is required. These diodes are suited for VCOs in missile seekers, telecom- munication systems and electronic warfare systems with critical post tuning drift specifications. Environmental Performance All tuning varactors in ceramic packages are capable of meeting the performance tests dictated by the methods and procedures of the latest revisions of MIL-S-19500, MIL- STD-202 and MIL-STD-750 which specify mechanical, electrical, thermal and other environmental tests common to semiconductor products. Case Styles 134 30 31 Absolute Maximum Ratings at 25°C Parameter Absolute Maximum Reverse Voltage Same as Breakdown Voltage Operating Temperature - 65°C to +150°C Storage Temperature - 65°C to +200°C Temperature Coefficient 400 ppm/°C at -4 Volts |
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