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ZVN4525GTA Datasheet(PDF) 2 Page - Diodes Incorporated

Part # ZVN4525GTA
Description  250V N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZVN4525GTA Datasheet(HTML) 2 Page - Diodes Incorporated

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ZVN4525G
Datasheet Number: DS33383 Rev. 2 - 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZVN4525G
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
250
V
Gate-Source Voltage
VGS
±40
V
Continuous Drain Current, VGS = 10V (Note 5)
TA = +25°C
ID
310
248
mA
TA = +70°C
Pulsed Drain Current (Note 7)
IDM
1.44
A
Continuous Source Current (Body Diode)
IS
1.1
A
Pulsed Source Current (Body Diode)
ISM
1.44
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation at TA= +25°C (Note 5)
Linear Derating Factor
PD
2
16
W
mW/°C
Junction to Ambient (Note 5)
RθJA
63
°C/W
Junction to Ambient (Note 6)
RθJA
26
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes:
5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR4 PCB measured at t 5 seconds.
7. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal.
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to voltage spacing between conductors.


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