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ZTX749 Datasheet(PDF) 1 Page - Diodes Incorporated |
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ZTX749 Datasheet(HTML) 1 Page - Diodes Incorporated |
1 / 3 page PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 APRIL 94 FEATURES * 25 Volt VCEO * 2 Amp continuous current * Low saturation voltage ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -2 A Power Dissipation at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -35 V IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -25 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA, IC=0 Collector Cut-Off Current ICBO -0.1 -10 µ A µ A VCB=-30V VCB=-30V,Tamb=100°C Emitter Cut-Off Current IEBO -0.1 µ A VEB=-4V, IE=0 Collector-Emitter Saturation Voltage VCE(sat) -0.12 -0.23 -0.3 -0.5 V V IC=1A, IB=-100mA* IC=2A, IB=-200mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 -1.25 V IC=1A, IB=-100mA* Base-Emitter Turn-On Voltage VBE(on) -0.8 -1 V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE 70 100 75 15 200 200 150 50 300 IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% E-Line TO92 Compatible ZTX749 3-254 C B E -40 0.0001 Derating curve T -Temperature (°C) Maximum transient thermal impedance Pulse Width (seconds) 10 100 1 0.1 0.01 -20 0 20 40 60 80 100 120 200 180 160 140 0.001 0 100 200 D=0.2 D=0.1 Single Pulse D=0.5 t1 tP D=t1/tP 1.0 0.5 2.0 1.5 Case temperature 2.5 Ambient temperat ure 0 D=1 (D.C.) ZTX749 ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Transition Frequency fT 100 160 MHz IC=-100mA, VCE=-5V f=100MHz Output Cpacitance Cobo 55 100 pF VCB=-10V f=1MHz Switching Times ton 40 ns IC=-500mA, VCC=-10V IB1=IB2=-50mA toff 450 ns *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) 175 116 70 °C/W °C/W °C/W Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 3-255 |
Similar Part No. - ZTX749_15 |
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Similar Description - ZTX749_15 |
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