ZTX749_15 datasheet(1/3 Pages) DIODES

Part #	ZTX749

Description	PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 1 APRIL 94

FEATURES

* 25 Volt VCEO

* 2 Amp continuous current

* Low saturation voltage

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-35

V

Collector-Emitter Voltage

VCEO

-25

V

Emitter-Base Voltage

VEBO

-5

V

Peak Pulse Current

ICM

-6

A

Continuous Collector Current

IC

-2

A

Power Dissipation at Tamb=25°C

derate above 25°C

Ptot

1

5.7

W

mW/ °C

Operating and Storage Temperature Range

Tj:Tstg

-55 to +200

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

-35

V

IC=-100µA, IE=0

Collector-Emitter

Breakdown Voltage

V(BR)CEO

-25

V

IC=-10mA, IB=0*

Emitter-Base

Breakdown Voltage

V(BR)EBO

-5

V

IE=-100µA, IC=0

Collector Cut-Off

Current

ICBO

-0.1

-10

µ

A

µ

A

VCB=-30V

VCB=-30V,Tamb=100°C

Emitter Cut-Off Current IEBO

-0.1

µ

A

VEB=-4V, IE=0

Collector-Emitter

Saturation Voltage

VCE(sat)

-0.12

-0.23

-0.3

-0.5

V

IC=1A, IB=-100mA*

IC=2A, IB=-200mA*

Base-Emitter

Saturation Voltage

VBE(sat)

-0.9

-1.25

V

IC=1A, IB=-100mA*

Base-Emitter

Turn-On Voltage

VBE(on)

-0.8

-1

V

IC=-1A, VCE=-2V*

Static Forward Current

Transfer Ratio

hFE

70

100

75

15

200

150

50

300

IC=-50mA, VCE=-2V*

IC=-1A, VCE=-2V*

IC=-2A, VCE=-2V*

IC=-6A, VCE=-2V*

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

E-Line

TO92 Compatible

ZTX749

3-254

C

B

E

-40

0.0001

Derating curve

T -Temperature (°C)

Maximum transient thermal impedance

Pulse Width (seconds)

10

100

1

0.1

0.01

-20

0

20 40

60 80 100 120

200

180

160

140

0.001

0

100

200

D=0.2

D=0.1

Single Pulse

D=0.5

t1

tP

D=t1/tP

1.0

0.5

2.0

1.5

Case

temperature

2.5

Ambient

temperat

ure

0

D=1 (D.C.)

ZTX749

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN. TYP.

MAX.

UNIT

CONDITIONS.

Transition

Frequency

fT

100

160

MHz

IC=-100mA,

VCE=-5V f=100MHz

Output Cpacitance

Cobo

55

100

pF

VCB=-10V f=1MHz

Switching Times

ton

40

ns

IC=-500mA,

VCC=-10V

IB1=IB2=-50mA

toff

450

ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

MAX.

UNIT

Thermal Resistance:Junction to Ambient1

Junction to Ambient2

Junction to Case

Rth(j-amb)1

Rth(j-amb)2

Rth(j-case)

175

116

70

°C/W

Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

3-255

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