MMSTA63_15 datasheet(2/3 Pages) DIODES

Part #	MMSTA63

Description	PNP SURFACE MOUNT DARLINGTON TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Collector-Emitter Breakdown Voltage

V(BR)CEO

-30

⎯

V

IC = -100μA VBE = 0V

Collector Cutoff Current

ICBO

⎯

-100

nA

VCB = -30V, IE = 0

Emitter Cutoff Current

IEBO

⎯

-100

nA

VEB = -10V, IC = 0

ON CHARACTERISTICS (Note 5)

DC Current Gain

MMSTA63

MMSTA64

MMSTA63

MMSTA64

hFE

5,000

10,000

20,000

⎯

IC = -10mA, VCE = -5.0V

IC = -100mA, VCE = -5.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

-1.5

V

IC = -100mA, IB = -100μA

Base- Emitter Saturation Voltage

VBE(SAT)

⎯

-2.0

V

IC = -100mA, VCE = -5.0V

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

fT

125

⎯

MHz

VCE = -5.0V, IC = -10mA,

f = 100MHz

Notes:

5. Short duration pulse test used to minimize self-heating effect.

0

50

25

50

75

100

125

150

175

200

T , AMBIENT TEMPERATURE (°C)

Fig. 1, Max Power Dissipation vs.

Ambient Temperature

A

100

150

200

0

0.40

0.45

0.50

0.55

0.60

0.65

0.70

0.75

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

1

10

100

1,000

I , COLLECTOR CURRENT (mA)

Fig. 2, Collector Emitter Saturation Voltage

vs. Collector Current

C

100

1,000

10,000,000

10,000

100,000

1,000,000

1

10

1,000

100

I , COLLECTOR CURRENT (mA)

Fig. 3, DC Current Gain vs.

Collector Current

C

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

0.1

1

10

100

I , COLLECTOR CURRENT (mA)

Fig. 4, Base Emitter Voltage vs.

Collector Current

C

DS30159 Rev. 9 - 2

2 of 3

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