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Optimum Technology Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

Functional Block Diagram

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

RF MEMS

LDMOS

VREG1

RF IN

BIAS VCC

RF OUT

RF OUT

RF OUT

15

14

13

12

11

10

4

3

2

1

16

9

8

7

6

5

Stage

Stage

Stage

Interstage

Match

Interstage

Match

Bias

Detector

Input

Match

PDOWN

GND

RF5623

SINGLE 5.0V, 3.3 TO 3.8 GHZ

LINEAR POWER AMPLIFIER

The RF5623 is a linear power amplifier IC designed specifically for WiMAX

medium power applications. The device is manufactured on an advanced

InGaP Heterojunction Bipolar Transistor (HBT) process, and has been

designed for use as the final RF amplifier in 802.16e transmitters. The

device is provided in a 3mmx3mmx0.45mm, 16-pin, leadless chip carrier

with a backside ground. The RF5623 is designed to maintain linearity over

a wide range of conditions and power outputs.

Features



High Gain; 32dB



2.5% EVM (RMS) at 26dBm,

5.0V



Integrated Power Detector



High Impedance Enable



Integrated Input Match



Footprint compatible to RF5602

Applications



WiMAX Customer Premises

Equipment



WiMAX Access Points



IEEE 802.16 WiMAX Systems

DS120213



RF5623Single

5.0V, 3.3 to

3.8 GHz Linear

Power Ampli-

fier

Package Style: QFN, 16-Pin, 3mmx3mmx0.45mm