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DMP21D5UFD Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP21D5UFD Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page DMP21D5UFD Document number: DS35931 Rev. 4 - 2 2 of 6 www.diodes.com August 2012 © Diodes Incorporated DMP21D5UFD Maximum Ratings (@T A = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25°C TA = +70°C ID -600 -500 mA Continuous Drain Current (Note 6) VGS = -1.8V Steady State TA = +25°C TA = +70°C ID -400 -300 mA Pulsed Drain Current (10 μs pulse, duty cycle = 1%) IDM -2 A Maximum Body Diode continuous Current IS -800 mA Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD 0.4 W Thermal Resistance, Junction to Ambient (Note 5) Steady state RθJA 280 °C/W Total Power Dissipation (Note 6) PD 0.8 W Thermal Resistance, Junction to Ambient (Note 6) Steady state RθJA 140 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@T A = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -20 — — V VGS = 0V, ID = -1mA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — -80 -100 nA VDS = -4.5V, VGS = 0V VDS = -20V, VGS = 0V Gate-Source Leakage IGSS — — ±10.0 µA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) -0.5 — -1.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) — 0.7 1.0 Ω VGS = -4.5V, ID = -100mA — 0.9 1.5 VGS = -2.5V, ID = -80mA — 1.2 2.0 VGS = -1.8V, ID = -40mA — 1.5 3.0 VGS = -1.5V, ID = -30mA — 5 — VGS = -1.2V, ID = -1mA Forward Transfer Admittance |Yfs| — 0.7 — S VDS = -3V, ID = -100mA Diode Forward Voltage VSD — -0.75 -1.2 V VGS = 0V, IS = -330mA, DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 46.1 — pF VDS = -10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 7.2 — Reverse Transfer Capacitance Crss — 4.9 — Total Gate Charge VGS = -4.5V Qg — 0.5 — nC VDS = -10V, ID = -250mA Total Gate Charge VGS = -8V Qg — 0.8 — Gate-Source Charge Qgs — 0.1 — Gate-Drain Charge Qgd — 0.1 — Turn-On Delay Time tD(on) — 8.5 — ns VDD = -3V, VGS = -2.5V, RL = 300Ω, RG = 25Ω, ID = -100mA Turn-On Rise Time tr — 4.3 — Turn-Off Delay Time tD(off) — 20.2 — Turn-Off Fall Time tf — 19.2 — Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. |
Similar Part No. - DMP21D5UFD_15 |
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Similar Description - DMP21D5UFD_15 |
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