DMP21D5UFD

Document number: DS35931 Rev. 4 - 2

2 of 6

www.diodes.com

August 2012

© Diodes Incorporated

DMP21D5UFD

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-20

V

Gate-Source Voltage

±8

V

Steady

State

-600

-500

mA

Steady

State

-400

-300

mA

Pulsed Drain Current (10

μs pulse, duty cycle = 1%)

-2

A

Maximum Body Diode continuous Current

-800

mA

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

0.4

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

280

°C/W

Total Power Dissipation (Note 6)

0.8

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

140

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

-20

—

—

V

—

—

-80

-100

nA

Gate-Source Leakage

—

—

±10.0

µA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-0.5

—

-1.0

V

Static Drain-Source On-Resistance

—

0.7

1.0

Ω

—

0.9

1.5

—

1.2

2.0

—

1.5

3.0

—

5

—

Forward Transfer Admittance

—

0.7

—

S

Diode Forward Voltage

—

-0.75

-1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

46.1

—

pF

f = 1.0MHz

Output Capacitance

—

7.2

—

Reverse Transfer Capacitance

—

4.9

—

—

0.5

—

nC

—

0.8

—

Gate-Source Charge

—

0.1

—

Gate-Drain Charge

—

0.1

—

Turn-On Delay Time

—

8.5

—

ns

Turn-On Rise Time

—

4.3

—

Turn-Off Delay Time

—

20.2

—

Turn-Off Fall Time

—

19.2

—

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.