RF Micro Devices Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421

DS131004

For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.

The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of

third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended

application circuitry and specifications at any time without prior notice.

2 of 11

NBB-500

Absolute Maximum Ratings

Parameter

Rating

Unit

RF Input Power

+20

dBm

Power Dissipation

300

mW

Device Current

70

mA

Channel Temperature

150

°C

Operating Temperature

-45 to +85

°C

Storage Temperature

-65 to +150

°C

Exceeding any one or a combination of these limits may cause permanent damage

.

Caution! ESD sensitive device.

RFMD Green: RoHS compliant per EU

Directive 2011/65/EU, halogen free per

IEC 61249-2-21, <1000ppm each of

antimony trioxide in polymeric materials

and red phosphorus as a flame retardant,

and <2% antimony solder.

Exceeding any one or a combination of the Absolute

Maximum Rating conditions may cause permanent

damage to the device. Extended application of Absolute

Maximum Rating conditions to the device may reduce

device reliability. Specified typical performance or

functional operation of the device under Absolute

Maximum Rating conditions is not implied.

Nominal Operating Parameters

Parameter

Specification

Unit

Condition

Min

Typ

Max

General Performance

Small Signal Power Gain, S21

19.0

20.5

dB

f = 0.1GHz to 1.0GHz

19.5

dB

f = 1.0GHz to 2.0GHz

16.0

18.5

dB

f = 2.0GHz to 4.0GHz

Gain Flatness, GF

±0.8

dB

f = 0.1GHz to 3.0GHz

Input and Output VSWR

1.70:1

f = 0.1GHz to 4.0GHz

1.45:1

f = 4.0GHz to 6.0GHz

1.65:1

f = 6.0GHz to 10.0GHz

Bandwidth, BW

4.2

GHz

BW3 (3dB)

Output Power at -1dB

Compression, P1dB

12.3

dBm

f = 2.0GHz

14.0

dBm

f = 6.0GHz

Noise Figure, NF

3.2

dB

f = 3.0GHz

Third Order Intercept, IP3

+26.5

dBm

f = 2.0GHz

Reverse Isolation, S12

-17.0

dB

f = 0.1GHz to 10.0GHz

Device Voltage, V

D

3.6

3.9

4.2

V

Gain Temperature Coefficient,

/

-0.0015

dB/°C