D40D1

D40D5

D40D11

D40D2

D40D7

D40D13

D40D3

D40D8

D40D14

D40D4

D40D10

NPN SILICON

POWER TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR D40D series types

are NPN silicon power transistors designed for amplifier

and switching applications. The PNP complementary

types are the D41D series.

MARKING: FULL PART NUMBER

D40D10

D40D1

D40D11

D40D2

D40D4

D40D7

D40D13

MAXIMUM RATINGS: (TC=25°C)

SYMBOL D40D3

D40D5

D40D8

D40D14

UNITS

Collector-Emitter Voltage

VCES

45

60

75

90

V

Collector-Emitter Voltage

VCEO

30

45

60

75

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

1.0

A

Peak Collector Current

ICM

1.5

A

Power Dissipation

PD

6.25

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJC

20

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICES

VCE=Rated VCES

100

nA

IEBO

VEB=5.0V

100

nA

BVCEO

lC=10mA (D40D1, 2, 3)

30

V

BVCEO

lC=10mA (D40D4, 5)

45

V

BVCEO

lC=10mA (D40D7, 8)

60

V

BVCEO

lC=10mA (D40D10, 11, 13, 14)

75

V

VCE(SAT)

lC=500mA, IB=50mA (D40D1, 2, 4, 5)

0.5

V

VCE(SAT)

lC=500mA, IB=50mA (D40D7, 8, 10, 11, 13, 14)

1.0

V

VBE(SAT)

lC=500mA, IB=50mA

1.5

V

D40D1

D40D4

D40D5

D40D7

D40D8

D40D10

D40D11

D40D13

D40D2

D40D3

D40D14

MIN MAX

MIN MAX

MIN MAX

MIN MAX

hFE

VCE=2.0V, IC=100mA

50

150

120

360

290

-

120

360

hFE

VCE=2.0V, IC=1.0A

(Except D40D13, 14)

10

-

20

-

10

-

10

-

TO-202 CASE

R1 (23-January 2012)

www.centr a lsemi.com