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HRS56N08K Datasheet(PDF) 2 Page - SemiHow Co.,Ltd. |
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HRS56N08K Datasheet(HTML) 2 Page - SemiHow Co.,Ltd. |
2 / 7 page ◎ SEMIHOW REV.A0,December 2014 Electrical Characteristics T J=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units I S Continuous Source-Drain Diode Forward Current -- -- 110 A I SM Pulsed Source-Drain Diode Forward Current -- -- 370 V SD Source-Drain Diode Forward Voltage I S = 30 A, VGS = 0 V -- -- 1.3 V trr Reverse Recovery Time I S = 30 A, VGS = 0 V di F/dt = 100 A/μs -- 60 -- ㎱ Qrr Reverse Recovery Charge -- 100 -- nC On Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 ㎂ 80 -- -- V I DSS Zero Gate Voltage Drain Current V DS = 64 V, VGS = 0 V -- -- 1 ㎂ V DS = 64 V, TJ = 125℃ -- -- 100 ㎂ I GSS Gate-Body Leakage Current V GS = ±25 V, VDS = 0 V -- -- ±100 ㎁ Off Characteristics C iss Input Capacitance V DS = 25 V, VGS = 0 V, f = 1.0 MHz -- 4700 -- ㎊ C oss Output Capacitance -- 620 -- ㎊ C rss Reverse Transfer Capacitance -- 400 -- ㎊ R g Gate Resistance V GS = 0 V, VDS = 0 V, f = 1MHz -- 1.7 -- Ω Dynamic Characteristics t d(on) Turn-On Time V DS = 40 V, ID = 30 A, R G = 6 Ω -- 65 -- ㎱ t r Turn-On Rise Time -- 70 -- ㎱ t d(off) Turn-Off Delay Time -- 190 -- ㎱ t f Turn-Off Fall Time -- 50 -- ㎱ Q g Total Gate Charge V DS = 64 V, ID = 30 A, V GS = 10 V -- 110 -- nC Q gs Gate-Source Charge -- 24 -- nC Q gd Gate-Drain Charge -- 44 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics V GS Gate Threshold Voltage V DS = VGS, ID = 250 ㎂ 2.2 -- 3.8 V R DS(ON) Static Drain-Source On-Resistance V GS = 10 V, ID = 40 A -- 4.5 5.6 m Ω g FS Forward Transconductance V DS = 20, ID = 40 A -- 80 -- S Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, I AS=29A, VDD=35V, RG=25Ω, Starting TJ =25°C |
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