HRP140N06K datasheet(3/8 Pages) SEMIHOW

Part #	HRP140N06K

Description	60V N-Channel Trench MOSFET

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◎ SEMIHOW REV.A0,December 2014

Typical Characteristics

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

10

-1

10

0

10

1

0

500

1000

1500

2000

2500

3000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

0

10

20

30

40

50

0

2

4

6

8

10

12

V

DS = 48V

I

D = 15A

Q

G, Total Gate Charge [nC]

10

0

10

1

10

1

10

2

V

GS

Top :

15 V

10 V

8 V

7 V

6 V

5.5 V

5 V

Bottom : 4.5 V

* Notes :

1. 300us Pulse Test

2. T

C = 25

oC

V

DS, Drain-Source Voltage [V]

0

20

40

60

80

100

120

140

8

12

16

20

V

GS = 10V

∗ Note : T

J = 25

oC

I

D, Drain Current [A]

2

4

6

8

10

0.1

1

10

100

25

oC

* Notes :

1. V

DS= 20V

2. 300us Pulse Test

V

GS, Gate-Source Voltage [V]

175

oC

0.0

0.4

0.8

1.2

1.6

2.0

0.1

1

10

100

25

oC

* Notes :

1. V

GS= 0V

2. 300us Pulse Test

V

SD, Source-Drain Voltage [V]

175

oC

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HRP140N06K Datasheet(PDF) 3 Page - SemiHow Co.,Ltd.

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