HRP100N08K datasheet(3/8 Pages) SEMIHOW

Part #	HRP100N08K

Description	80V N-Channel Trench MOSFET

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◎ SEMIHOW REV.A0,December 2014

Typical Characteristics

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

10

0

10

1

10

1

10

2

V

GS

Top :

15 V

10 V

8 V

7 V

6 V

5.5 V

5 V

Bottom : 4.5 V

* Notes :

1. 300us Pulse Test

2. T

C = 25

oC

V

DS, Drain-Source Voltage [V]

10

-1

10

0

10

1

0

2000

4000

6000

8000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

0.0

0.4

0.8

1.2

1.6

2.0

0.1

1

10

100

25

oC

* Notes :

1. V

GS= 0V

2. 300us Pulse Test

V

SD, Source-Drain Voltage [V]

175

oC

0

30

60

90

120

150

8.0

8.5

9.0

9.5

10.0

10.5

11.0

V

GS = 10V

∗ Note : T

J = 25

oC

I

D, Drain Current [A]

0

20

40

60

80

0

2

4

6

8

10

12

V

DS = 64V

I

D = 30A

Q

G, Total Gate Charge [nC]

2

4

6

8

10

0.1

1

10

100

25

oC

* Notes :

1. V

DS= 20V

2. 300us Pulse Test

V

GS, Gate-Source Voltage [V]

175

oC

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