DMP3028LK3

Document Number DS37257 Rev. 2 - 2

4 of 7

www.diodes.com

December 2014

© Diodes Incorporated

DMP3028LK3

T , AMBIENT TEMPERATURE (°C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

A

0

0.5

1

1.5

2

2.5

3

-50

-25

0

25

50

75

100

125

150

-I = 1mA

D

-I = 250µA

D

-V

, SOURCE-DRAIN VOLTAGE (V)

Figure 8 Diode Forward Voltage vs. Current

SD

0

5

10

15

20

0

0.2

0.4

0.6

0.8

1

1.2

T = 150 C

A



T = 125 C

A



T = 85 C

A



T = -55 C

A



T = 25 C

A



-V

, DRAIN-SOURCE VOLTAGE (V)

Figure 9 Typical Drain-Source Leakage Current vs. Voltage

DS

0.1

1

10

100

1000

10000

0

5

10

15

20

25

30

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

Q , TOTAL GATE CHARGE (nC)

Figure 10 Gate-Charge Characteristics

g

0

1

2

3

4

5

6

7

8

9

10

0

5

10

15

20

25

V

= -15V

I = -7A

DS

D

-V

, DRAIN-SOURCE VOLTAGE (V)

Figure 11 Typical Junction Capacitance

DS

10

100

1000

10000

0

5

10

15

20

25

30

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 12 SOA, Safe Operation Area

0.01

0.1

1

10

100

0.1

1

10

100

DC

P

= 10s

W

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W

T

= 150°C

J (m ax )

T = 25°C

A

V

= 10V

GS

Single Pulse

DUT on 1 * MRP Board

Limited