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DMP3018SFK-7 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP3018SFK-7 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page DMP3018SFK Document number: DS37604 Rev. 2 - 2 2 of 6 www.diodes.com January 2015 © Diodes Incorporated DMP3018SFK Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (Note 6) VGS = -10V Steady State TA = +25°C TA = +70°C ID -10.2 -8.1 A Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25°C TA = +70°C ID -7.7 -6.1 A Maximum Continuous Body Diode Forward Current (Note 6) IS -3 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM -80 A Avalanche Current (Note 7) IAS -14 A Avalanche Energy (Note 7) EAS 104 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD 1 W Thermal Resistance, Junction to Ambient (Note 5) RJA 123 °C/W Total Power Dissipation (Note 6) PD 2.2 W Thermal Resistance, Junction to Ambient (Note 6) RJA 55 °C/W Total Power Dissipation (Note 6) TC = +25°C PD 17 W Thermal Resistance, Junction to Case (Note 6) RJC 7.2 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -30 — — V VGS = 0V, ID = -10mA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — -1 µA VDS = -24V, VGS = 0V Zero Gate Voltage Drain Current TJ = +150°C (Note 9) — — -100 Gate-Source Leakage IGSS — — ±10 µA VGS = ±25V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) -1 -1.6 -3 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) — 9.5 14.5 mΩ VGS = -10V, ID = -9.5A — 15 25.5 VGS = -4.5V, ID = -6.9A Diode Forward Voltage VSD — -0.7 -1.2 V VGS = 0V, IS = -1A On State Drain Current (Note 9) ID(ON) -20 — — A VDS ≦-5V, VGS = -10V DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 2,207 4,414 pF VDS = -15V, VGS = 0V, f = 1MHz Output Capacitance Coss — 390 780 Reverse Transfer Capacitance Crss — 343 686 Gate Resistance Rg — 8.4 20 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -10V) Qg — 42.7 90 nC VDS = -15V, ID = -9.5A Total Gate Charge (VGS = -4.5V) Qg — 21.6 45 Gate-Source Charge Qgs — 7.9 16 Gate-Drain Charge Qgd — 10 20 Turn-On Delay Time tD(on) — 7.35 15 ns VDD = -15V, VGS = -10V, RGEN = 6Ω, ID = -9.5A Turn-On Rise Time tr — 16.4 30 Turn-Off Delay Time tD(off) — 67.2 110 Turn-Off Fall Time tf — 37.5 60 Reverse Recovery Time trr — 18.6 35 ns IS = -9.5A, di/dt = 100A/μs Reverse Recovery Charge Qrr — 8.6 17.5 nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7. UIS in production with L = 1mH, TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. |
Similar Part No. - DMP3018SFK-7 |
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Similar Description - DMP3018SFK-7 |
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