POWERDI is a registered trademark of Diodes Incorporated

DMP3017SFG

Document number: DS36479 Rev. 3 - 2

3 of 7

www.diodes.com

December 2013

© Diodes Incorporated

DMP3017SFG

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

-30

—

—

V

Zero Gate Voltage Drain Current

—

—

-1

μA

Gate-Source Leakage

—

—

±10

μA

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

-1.0

—

-3.0

V

Static Drain-Source On-Resistance

—

8.5

10

mΩ

—

15

18

Forward Transfer Admittance

—

24

—

S

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

—

2246

—

pF

f = 1.0MHz

Output Capacitance

—

352

—

pF

Reverse Transfer Capacitance

—

294

—

pF

Gate resistance

—

5.1

12

Ω

—

20.5

—

nC

—

41

—

nC

Gate-Source Charge

—

7.6

—

nC

Gate-Drain Charge

—

8.0

—

nC

Turn-On Delay Time

—

7.5

—

ns

Turn-On Rise Time

—

15.4

—

ns

Turn-Off Delay Time

—

45.6

—

ns

Turn-Off Fall Time

—

36.8

—

ns

BODY DIODE CHARACTERISTICS

Diode Forward Voltage

—

-0.7

—

V

Reverse Recovery Time (Note 9)

—

20

—

ns

Reverse Recovery Charge (Note 9)

—

9.5

—

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

-V , DRAIN -SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

DS

0.0

5.0

10.0

15.0

20.0

25.0

30.0

0

1

23

45

V

= -2.5V

GS

V

= -3.0V

GS

V

= -3.5V

GS

V

= -4.0V

GS

V= -10V

GS

V

= -5.5V

GS

V

= -5.5V

GS

-V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

0

5

10

15

20

25

30

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

V

= -5.0V

DS