DMP2100U

Document number: DS35718 Rev. 6 - 2

2 of 6

www.diodes.com

April 2013

© Diodes Incorporated

DMP2100U

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

-20

V

Gate-Source Voltage (Note 6)

±10

V

Steady

State

-4.3

-3.4

A

t<5s

-5.5

-4.3

A

Maximum Continuous Body Diodes Forward Current (Note 8)

-2

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

-30

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 7)

0.8

W

0.5

Thermal Resistance, Junction to Ambient (Note 7)

Steady State

161

°C/W

t<5s

96

Total Power Dissipation (Note 8)

1.3

W

0.8

Thermal Resistance, Junction to Ambient (Note 8)

Steady State

99

°C/W

t<5s

60

Thermal Resistance, Junction to Case (Note 8)

15

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

-20

—

—

V

Zero Gate Voltage Drain Current

—

—

-1

µA

Gate-Source Leakage

—

—

±10

µA

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

-0.3

—

-1.4

V

Static Drain-Source On-Resistance

—

25

38

mΩ

—

29

43

—

37

75

—

47

—

Forward Transfer Admittance

—

3

—

S

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

—

216

—

pF

f = 1.0MHz

Output Capacitance

—

90

—

pF

Reverse Transfer Capacitance

—

24

—

pF

Gate Resistnace

—

250

—

Ω

SWITCHING CHARACTERISTICS (Note 10)

Total Gate Charge

—

9.1

—

nC

Gate-Source Charge

—

1.6

—

nC

Gate-Drain Charge

—

2.0

—

nC

Turn-On Delay Time

—

80

—

ns

Turn-On Rise Time

—

155

—

ns

Turn-Off Delay Time

—

688

—

ns

Turn-Off Fall Time

—

423

—

ns

Notes:

7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

8. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.