DMP2018LFK

Document number: DS35357 Rev. 5 - 2

1 of 7

www.diodes.com

March 2012

© Diodes Incorporated

DMP2018LFK

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

-20V

16m

-12.8A

25m

-10A

Description and Applications

This new generation MOSFET has been designed to minimize the on-

performance, making it ideal for high efficiency power management

applications.

•

DC-DC Converters

•

Power management functions

•

Notebook PC Applications

•

Portable Equipment Applications

Features and Benefits

•

Low On-Resistance

•

Low Input Capacitance

•

Low Input/Output Leakage

•

ESD Protected Gate up to 2kV

•

Lead Free by Design, RoHS Compliant (Note 1)

•

"Green" Device (Note 2)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: U-DFN2523-6

•

Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminals: Finish

⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

•

Weight: 0.008 grams (approximate)

Part Number

Case

Packaging

DMP2018LFK-7

U-DFN2523-6

3,000 / Tape & Reel

DMP2018LFK-13

U-DFN2523-6

10,000 / Tape & Reel

Notes:

1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year

2011

2012

2013

2014

2015

2016

2017

Code

Y

Z

A

B

C

D

E

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

U-DFN2523-6

Bottom View

Equivalent Circuit

P8 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September)

Source

Gate

Protection

Diode

Gate

Drain

ESD PROTECTED TO 2kV

Pin 1, 2 = Source

Pin 3 = Gate

Pin 4, 5, 6 = Drain

P8

Pin 1