DMP1022UFDE

2 of 7

www.diodes.com

July 2012

© Diodes Incorporated

DMP1022UFDE

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-12

V

Gate-Source Voltage

±8

V

Steady

State

-9.1

-7.2

A

t<5s

-11.2

-9.0

A

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

-90

A

Continuous Source-Drain Diode Current

-2.5

-7.1

A

Pulsed Source-Drain Diode Current (10μs pulse, duty cycle = 1%)

-50

A

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

0.66

W

0.42

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

189

°C/W

t<5s

123

Total Power Dissipation (Note 6)

2.03

W

1.3

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

61

°C/W

t<5s

40

Thermal Resistance, Junction to Case (Note 6)

Steady state

9.3

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

0.01

0.1

1

10

100

0.01

0.1

1

10

100

-V , DRAIN-SOURCE VOLTAGE (V)

Fig. 1 SOA, Safe Operation Area

DS

R

Limited

DS(on)

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

P = 10 s

W

µ

0

10

20

30

40

50

60

70

80

90

100

t1, PULSE DURATION TIME (sec)

Fig. 2 Single Pulse Maximum Power Dissipation

0.001 0.01

0.1

1

10

100 1,000

0.0001

Single Pulse

R

= 61 C/W

R

= r * R

T - T = P * R

θ

θθ

θ

JA

JA(t)

(t)

JA

JA

JA(t)

°