◎ SEMIHOW REV.A0,December 2014

BV

R

I

FEATURES

Absolute Maximum Ratings

T

HRD80N06K / HRU80N06K

60V N-Channel Trench MOSFET

Symbol

Parameter

Value

Units

V

DSS

Drain-Source Voltage

60

V

I

D

Drain Current

– Continuous (T

114 *

A

Drain Current

– Continuous (T

80 *

A

I

DM

Drain Current

– Pulsed

(Note 1)

400 *

A

V

GS

Gate-Source Voltage

±25

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

340

mJ

E

AR

Repetitive Avalanche Energy

(Note 1)

16

mJ

P

D

Power Dissipation (T

3

W

Power Dissipation (T

- Derate above 25℃

160

W

1.07

W/℃

T

Operating and Storage Temperature Range

-55 to +175

℃

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

℃

1.Gate 2. Drain 3. Source

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Case

--

0.9

℃/W

Junction-to-Ambient*

--

50

Junction-to-Ambient

--

110

December 2014

2

1

2

3

1

3

D-PAK

I-PAK

HRD80N06K

HRU80N06K

* When mounted on the minimum pad size recommended (PCB Mount)

 Originative New Design

 Superior Avalanche Rugged Technology

 Excellent Switching Characteristics

 Unrivalled Gate Charge : 90 nC (Typ.)

 Extended Safe Operating Area

 Lower R

 100% Avalanche Tested

* Drain current limited by maximum junction temperature