DMN3730UFB4-7 datasheet(4/7 Pages) DIODES

Part #	DMN3730UFB4-7

Description	30V N-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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4 / 7 page

DMN3730UFB4

Document number: DS35017 Rev. 8 - 2

4 of 7

www.diodes.com

May 2015

DMN3730UFB4

A Product Line of

Diodes Incorporated

0

0.4

0.8

1.2

1.6

2

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

0

0.2

0.4

0.6

0.8

V

= 4.5V

GS

V

= 2.5V

GS

V

= 1.8V

GS

0

0.25

0.5

0.75

1

1.25

1.5

I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

0

0.2

0.4

0.6

0.8

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 4.5V

GS

Fig. 5 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

0.6

0.8

1.0

1.2

1.4

1.6

V

= 4.5V

I = 1.0A

GS

D

V

= 2.5V

I = 500mA

GS

D

Fig. 6 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

0

0.2

0.4

0.6

0.8

V

= 4.5V

I = 1.0A

GS

D

V

= 2.5V

I = 500mA

GS

D

0

0.2

0.4

0.6

0.8

1

1.2

Fig. 8 Diode Forward Voltage vs. Current

V

, SOURCE-DRAIN VOLTAGE (V)

SD

0

0.4

0.8

1.2

1.6

2.0

T = 25°C

A

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50

-25

0

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (°C)

A

0

0.2

0.4

0.6

0.8

1.0

1.2

I = 250µA

D

I = 1mA

D

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DMN3730UFB4-7 Datasheet(PDF) 4 Page - Diodes Incorporated

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