DMN3016LPS

Document number: DS35646 Rev. 2 - 2

4 of 7

www.diodes.com

February 2015

© Diodes Incorporated

POWERDI is a registered trademark of Diodes Incorporated.

DMN3016LPS

0

0.5

1

1.5

2

2.5

3

-50

-25

0

25

50

75

100

125

150

T

Figure 7 Gate Theshold Variation vs Junction

Temperature

I

I

0

5

10

15

20

25

30

0

0.2

0.4

0.6

0.8

1

1.2

V

Figure 8 Diode Forward Voltage vs Current

V

10

100

1000

10000

0

2

4

6

8

10

12

14

16

18

20

V

Figure 9 Typical Junction Capacitance

f=1MHz

C

iss

C

oss

C

rss

0

1

2

3

4

5

6

7

8

9

10

0

5

10

15

20

25

Qg (nC)

Figure 10 Gate Charge

V

0.01

0.1

1

10

100

0.1

1

10

100

V

Figure 11 SOA, Safe Operation Area

T

T

V

Single Pulse

DUT on 1*MRP Board

R

DS(ON)

Limited

DC

P

P

P

P

P

P