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PN2369A Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part # PN2369A
Description  NPN SILICON TRANSISTOR
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Manufacturer  CENTRAL [Central Semiconductor Corp]
Direct Link  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

PN2369A Datasheet(HTML) 1 Page - Central Semiconductor Corp

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2N5769
PN2369A
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5769 and
PN2369A are epitaxial planar NPN Silicon Transistors
designed for ultra high speed saturated switching
applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCES
40
V
Collector-Emitter Voltage
VCEO
15
V
Emitter-Base Voltage
VEBO
4.5
V
Continuous Collector Current
IC
200
mA
Peak Collector Current
ICM
500
mA
Power Dissipation
PD
350
mW
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=20V
400
nA
ICBO
VCB=20V, TA=125°C
30
µA
ICES
VCE=20V (2N5769)
400
nA
IEBO
VEB=4.5V (2N5769)
1.0
µA
BVCBO
IC=10µA
40
V
BVCES
IC=10µA
40
V
BVCEO
IC=10mA
15
V
BVEBO
IE=10µA
4.5
V
VCE(SAT)
IC=10mA, IB=1.0mA
200
mV
VCE(SAT)
IC=30mA, IB=3.0mA
250
mV
VCE(SAT)
IC=100mA, IB=10mA
500
mV
VBE(SAT)
IC=10mA, IB=1.0mA
700
850
mV
VBE(SAT)
IC=30mA, IB=3.0mA
1.15
V
VBE(SAT)
IC=100mA, IB=10mA
1.6
V
hFE
VCE=0.35V, IC=10mA (2N5769)
40
120
hFE
VCE=1.0V, IC=10mA (PN2369A)
40
120
hFE
VCE=0.4V, IC=30mA
30
hFE
VCE=1.0V, IC=100mA
20
TO-92 CASE
R1 (10-March 2011)
www.centr a lsemi.com


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