DMN1029UFDB-13 datasheet(3/6 Pages) DIODES

Part #	DMN1029UFDB-13

Description	N-CHANNEAL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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3 / 6 page

DMN1029UFDB

Document number: DS37711 Rev. 2 - 2

3 of 6

www.diodes.com

February 2015

DMN1029UFDB

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D, DRAIN-SOURCE CURRENT (A)

Figure 3. Typical On-Resistance vs. Drain Current and

Gate Voltage

V

GS=1.5V

V

GS=1.8V

V

GS=2.5V

V

GS=4.5V

0.0

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12.0

14.0

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20.0

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V

DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

V

GS=1.0V

V

GS=1.2V

V

GS=1.5V

V

GS=8.0V

V

GS=4.5V

V

GS=1.8V

V

GS=2.0V

V

GS=3.0V

V

GS=2.5V

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V

GS, GATE-SOURCE VOLTAGE (V)

Figure 2. Typical Transfer Characteristic

V

DS= 5.0V

T

A=-55℃

T

A=25℃

T

A=150℃

T

A=125℃

T

A=85℃

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V

GS, GATE-SOURCE VOLTAGE (V)

Figure 4. Typical Transfer Characteristic

I

D=5.0A

I

D=4.6A

I

D=4.1A

I

D=2.0A

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D, DRAIN CURRENT(A)

Figure 5. Typical On-Resistance vs. Drain Current and

Temperature

V

GS= 4.5V

T

A=-55℃

T

A=25℃

T

A=85℃

T

A=125℃

T

A=150℃

0.6

0.8

1

1.2

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-25

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150

T

J, JUNCTION TEMPERATURE (℃)

Figure 6. On-Resistance Variation with Temperature

V

GS=2.5V, ID=3.0A

V

GS=4.5V, ID=5.0A

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