DMN2400UFB4_15 datasheet(5/7 Pages) DIODES

Part #	DMN2400UFB4

Description	20V N-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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5 / 7 page

DMN2400UFB4

Document number: DS32025 Rev. 6 - 2

5 of 7

www.diodes.com

May 2015

DMN2400UFB4

0

10

20

30

40

50

60

0

5

10

15

20

Fig. 9 Typical Capacitance

V

, DRAIN-SOURCE VOLTAGE (V)

DS

f = 1MHz

Ciss

Coss

Crss

1

10

100

1,000

2

4

6

8

10

12

14

16

18

20

Fig. 10 Typical Drain-Source Leakage Current

vs. Drain-Source Voltage

V

, DRAIN-SOURCE VOLTAGE (V)

DS

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

T = -55°C

A

2

4

6

8

10

12

Fig. 11 Typical Gate-Source Leakage Current

vs. Gate-Source Voltage

V

, GATE-SOURCE VOLTAGE (V)

GS

1

10

100

1,000

10,000

100,000

T = 150°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = -55°C

A

1

10

100

1,000

10,000

100,000

2

4

6

8

10

12

Fig. 12 Typical Gate-Source Leakage Current

vs. Gate-Source Voltage

V

, GATE-SOURCE VOLTAGE (V)

GS

T = 150°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = -55°C

A

0.001

0.01

0.1

1

10

100

1,000

Fig. 13 Transient Thermal Response

t , PULSE DURATION TIME (s)

1

0.00001

0.0001

0.001

0.01

0.1

1

T - T = P * R

(t)

Duty Cycle, D = t /t

J

A

JA

12



R

(t) = r(t) *

JA

R

= 253°C/W



JA

P(pk)

t1

t

2

D = 0.7

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

D = 0.5

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