HFA10N90Z datasheet(3/7 Pages) SEMIHOW

Part #	HFA10N90Z

Description	Superior Avalanche Rugged Technology

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Manufacturer	SEMIHOW [SemiHow Co.,Ltd.]

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10

-1

10

0

10

1

0

1000

2000

3000

4000

5000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

* Notes :

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

10

0

10

1

10

0

10

1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom : 5.0 V

* Notes :

1. 250us Pulse Test

2. T

C = 25

oC

V

DS, Drain-Source Voltage [V]

Typical Characteristics

246

8

10

-1

10

0

10

1

150

oC

25

oC

-55

oC

* Notes :

1. V

DS = 50V

2. 250us Pulse Test

V

GS, Gate-Source Voltage [V]

0

5

10

15

20

25

30

0.5

1.0

1.5

2.0

2.5

3.0

V

GS = 20V

V

GS = 10V

* Note : T

J = 25

oC

I

D, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

10

-1

10

0

10

1

150

oC

* Notes :

1. V

GS = 0V

2. 250us Pulse Test

25

oC

V

SD, Source-Drain voltage [V]

0

10

2030

405060

7080

0

2

4

6

8

10

12

V

DS = 450V

V

DS = 180V

V

DS = 720V

* Note : I

D = 10A

Q

G, Total Gate Charge [nC]

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

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