2N3634

2N3635

SILICON

PNP TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N3634 and 2N3635

are silicon PNP epitaxial planar transistors designed for

general purpose switching and amplifier applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

140

V

Collector-Emitter Voltage

VCEO

140

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

1.0

A

Power Dissipation

PD

1.0

W

Power Dissipation (TC=25°C)

PD

5.0

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

Thermal Resistance

ΘJA

175

°C/W

Thermal Resistance

ΘJC

35

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=100V

100

nA

IEBO

VEB=3.0V

50

nA

BVCBO

IC=100μA

140

V

BVCEO

IC=10mA

140

V

BVEBO

IE=10μA

5.0

V

VCE(SAT)

IC=10mA, IB=1.0mA

0.3

V

VCE(SAT)

IC=50mA, IB=5.0mA

0.5

V

VBE(SAT)

IC=10mA, IB=1.0mA

0.8

V

VBE(SAT)

IC=50mA, IB=5.0mA

0.65

0.9

V

fT

VCE=30V, IC=30mA, f=100MHz (2N3634)

150

MHz

fT

VCE=30V, IC=30mA, f=100MHz (2N3635)

200

MHz

Cob

VCB=20V, IE=0, f=1.0MHz

10

pF

Cib

VEB=1.0V, IC=0, f=1.0MHz

75

pF

NF

VCE=10V, IC=0.5mA, RS=1.0kΩ, f=1.0kHz

3.0

dB

ton

VCC=100V, VBE=4.0V, IC=50mA

400

ns

toff

IB1=IB2=5.0mA

600

ns

TO-39 CASE

R1 (17-September 2013)

www.centr a lsemi.com