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2N2218A Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part No. 2N2218A
Description  SILICON NPN TRANSISTORS
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Maker  CENTRAL [Central Semiconductor Corp]
Homepage  http://www.centralsemi.com
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2N2218
2N2218A
SILICON
NPN TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2218 and
2N2218A are silicon NPN transistors manufactured by
the epitaxial planar process, and designed for small
signal general purpose and switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
2N2218
2N2218A
UNITS
Collector-Base Voltage
VCBO
60
75
V
Collector-Emitter Voltage
VCEO
30
40
V
Emitter-Base Voltage
VEBO
5.0
6.0
V
Continuous Collector Current
IC
800
mA
Power Dissipation
PD
800
mW
Power Dissipation (TC=25°C)
PD
3.0
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +200
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C)
2N2218
2N2218A
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
ICBO
VCB=50V
-
10
-
-
nA
ICBO
VCB=60V
-
-
-
10
nA
ICEV
VCE=60V, VEB=3.0V
-
-
-
10
nA
IEBO
VEB=3.0V
-
10
-
10
nA
BVCBO
IC=10μA
60
-
75
-
V
BVCEO
IC=10mA
30
-
40
-
V
BVEBO
IE=10μA
5.0
-
6.0
-
V
VCE(SAT)
IC=150mA, IB=15mA
-
0.4
-
0.3
V
VCE(SAT)
IC=500mA, IB=50mA
-
1.6
-
1.0
V
VBE(SAT)
IC=150mA, IB=15mA
-
1.3
-
1.2
V
VBE(SAT)
IC=500mA, IB=50mA
-
2.6
-
2.0
V
hFE
VCE=10V, IC=100μA
20
-
20
-
hFE
VCE=10V, IC=1.0mA
25
-
25
-
hFE
VCE=10V, IC=10mA
35
-
35
-
hFE
VCE=10V, IC=150mA
40
120
40
120
hFE
VCE=1.0V, IC=150mA
20
-
20
-
hFE
VCE=10V, IC=500mA
20
-
-
-
hFE
VCE=10V, IC=500mA
-
-
25
-
TO-39 CASE
R1 (31-July 2013)
www.centr a lsemi.com




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